International Science Index

1
2276
Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers
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Abstract:
The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K
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