Quad Flat No-Lead (QFN) packages have become very popular for turners, converters and audio amplifiers, among others applications, needing efficient power dissipation in small footprints. Since semiconductor junction temperature (TJ) is a critical parameter in the product quality. And to ensure that die temperature does not exceed the maximum allowable TJ, a thermal analysis conducted in an earlier development phase is essential to avoid repeated re-designs process with huge losses in cost and time. A simulation tool capable to estimate die temperature of components with QFN package was developed. Allow establish a non-empirical way to define an acceptance criterion for amount of voids in solder interface between its exposed pad and Printed Circuit Board (PCB) to be applied during industrialization process, and evaluate the impact of PCB designs parameters. Targeting PCB layout designer as an end user for the application, a user-friendly interface (GUI) was implemented allowing user to introduce design parameters in a convenient and secure way and hiding all the complexity of finite element simulation process. This cost effective tool turns transparent a simulating process and provides useful outputs after acceptable time, which can be adopted by PCB designers, preventing potential risks during the design stage and make product economically efficient by not oversizing it. This article gathers relevant information related to the design and implementation of the developed tool, presenting a parametric study conducted with it. The simulation tool was experimentally validated using a Thermal-Test-Chip (TTC) in a QFN open-cavity, in order to measure junction temperature (TJ) directly on the die under controlled and knowing conditions. Providing a short overview about standard thermal solutions and impacts in exposed pad packages (i.e. QFN), accurately describe the methods and techniques that the system designer should use to achieve optimum thermal performance, and demonstrate the effect of system-level constraints on the thermal performance of the design.

Due to the higher power loss levels in electronic components, the thermal design of PCBs (Printed Circuit Boards) of an assembled device becomes one of the most important quality factors in electronics. Nonetheless, some of leading causes of the microelectronic component failures are due to higher temperatures, the leakages or thermal-mechanical stress, which is a concern, is the reliability of microelectronic packages. This article presents an experimental approach to measure the junction temperature of exposed pad packages. The implemented solution is in a prototype phase, using a temperature-sensitive parameter (TSP) to measure temperature directly on the die, validating the numeric results provided by the Mechanical APDL (Ansys Parametric Design Language) under same conditions. The physical device-under-test is composed by a Thermal Test Chip (TTC-1002) and assembly in a QFN cavity, soldered to a test-board according to JEDEC Standards. Monitoring the voltage drop across a forward-biased diode, is an indirectly method but accurate to obtain the junction temperature of QFN component with an applied power range between 0,3W to 1.5W. The temperature distributions on the PCB test-board and QFN cavity surface were monitored by an infra-red thermal camera (Goby-384) controlled and images processed by the Xeneth software. The article provides a set-up to monitorize in real-time the junction temperature of ICs, namely devices with the exposed pad package (i.e. QFN). Presenting the PCB layout parameters that the designer should use to improve thermal performance, and evaluate the impact of voids in solder interface in the device junction temperature.

Temperature rising is a negative factor in almost all systems. It could cause by self heating or ambient temperature. In solar photovoltaic cells this temperature rising affects on the behavior of cells. The ability of a PV module to withstand the effects of periodic hot-spot heating that occurs when cells are operated under reverse biased conditions is closely related to the properties of the cell semi-conductor material.

In addition, the thermal effect also influences the estimation of the maximum power point (MPP) and electrical parameters for the PV modules, such as maximum output power, maximum conversion efficiency, internal efficiency, reliability, and lifetime. The cells junction temperature is a critical parameter that significantly affects the electrical characteristics of PV modules. For practical applications of PV modules, it is very important to accurately estimate the junction temperature of PV modules and analyze the thermal characteristics of the PV modules. Once the temperature variation is taken into account, we can then acquire a more accurate MPP for the PV modules, and the maximum utilization efficiency of the PV modules can also be further achieved.

In this paper, the three-Dimensional Transmission Line Matrix (3D-TLM) method was used to map the surface temperature distribution of solar cells while in the reverse bias mode. It was observed that some cells exhibited an inhomogeneity of the surface temperature resulting in localized heating (hot-spot). This hot-spot heating causes irreversible destruction of the solar cell structure. Hot spots can have a deleterious impact on the total solar modules if individual solar cells are heated. So, the results show clearly that the solar cells are capable of self-generating considerable amounts of heat that should be dissipated very quickly to increase PV module's lifetime.

A generalized method for small-signal simulation of avalanche noise in Mixed Tunneling Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series resistance is taken into account. The method is applied to a millimeter-wave Double Drift Region (DDR) MITATT device based on Silicon to obtain noise spectral density and noise measure as a function of frequency for different values of series resistance. It is found that noise measure of the device at the operating frequency (122 GHz) with input power density of 1010 Watt/m2 is about 35 dB for hypothetical parasitic series resistance of zero ohm (estimated junction temperature = 500 K). Results show that the noise measure increases as the value of parasitic resistance increases.

Standard packaging and interconnection technologies of power devices have difficulties meeting the increasing thermal demands of new application fields of power electronics devices. Main restrictions are the decreasing reliability of bond-wires and solder layers with increasing junction temperature. In the last few years intensive efforts have been invested in developing new packaging and interconnection solutions which may open a path to future application of power devices. In this paper, the main failure mechanisms of power devices are described and principle of new packaging and interconnection concepts and their power cycling reliability are presented.