Noise Performance of Millimeter-wave Silicon Based Mixed Tunneling Avalanche Transit Time(MITATT) Diode
Abstract:A generalized method for small-signal simulation of
avalanche noise in Mixed Tunneling Avalanche Transit Time
(MITATT) device is presented in this paper where the effect of series
resistance is taken into account. The method is applied to a
millimeter-wave Double Drift Region (DDR) MITATT device based
on Silicon to obtain noise spectral density and noise measure as a
function of frequency for different values of series resistance. It is
found that noise measure of the device at the operating frequency
(122 GHz) with input power density of 1010 Watt/m2 is about 35 dB
for hypothetical parasitic series resistance of zero ohm (estimated
junction temperature = 500 K). Results show that the noise measure
increases as the value of parasitic resistance increases.
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