13714

In this work the effects of uniaxial mechanical stress on a pixel readout circuit are theoretically analyzed. It is the effects of mechanical stress on the in-pixel transistors do not arise at the output, when a correlated double sampling circuit is used. However, mechanical stress effects on the photodiode will directly appear at the readout chain output. Therefore, compensation techniques are needed to overcome this situation. Moreover simulation technique of mechanical stress is proposed and diverse layout as well as design recommendations are put forward, in order to minimize stress related effects on the output of a circuit. he shown, that wever, Moreover, a out

[1] D. Kim, N. Lu, R. Ma, Y. Kim, R. Kim, S. Wang, J. Wu, S. Won, H. Tao, A. Islam, K. Yu, T Kim, R. Chowdhury, M. Ying, L. Xu, M. Li, H. Chung, H. Keum, M. McCormick, P. Liu, Y. Zhang, F. Omenetto, Y. Huang, T. Coleman, J. Rogers, "Epidermal Electronics," Science, vol. 333, pp. 838-843, Aug. 2011.

[2] W. Wong, A. Salleo, (Eds.), Flexible Electronics-Materials and Applications. : New York: Springer-Verlag, 2009, pp. v-vi.

[3] J. Burghartz, W. Appel, C. Harendt, H. Rempp, H. Richter, M. Zimmermann, "Ultra-thin chip technology and applications, a new paradigm in silicon technology, " Solid-State Electronics, vol. 54, pp. 818-829, 2010

[4] M. Koganemaru, T. Ikeda, N. Miyazaki, and H. Tomokage, "Experimental Study of Uniaxial-Stress Effects on DC Characteristics of nMOSFETs," IEEE Trans. Components and Packaging Technologies, vol. 33, No. 2, pp. 278-285, June 2010.

[5] N. Wacker, H. Rempp, S. Schmiel, and J.N. Burghartz, "Accurate measurement of piezocoefficients in CMOS transistors on conventional and ultra-thin Silicon Chips," Proc. SAFE, pp. 605-608, Nov. 2008.

[6] C. Gallon, G. Reimbold, G. Ghibaudo, R. A. Bianchi, and R. Gwoziecki,"Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) silicon," Solid-State Electronics, vol. 48, no. 4, pp. 561-566, 2004.

[7] A. T. Bradley, R. C. Jaeger, J. C. Suhling, and K. J. O-Connor, "Piezoresistive characteristics of short-channel MOSFETs on (100) silicon," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 2009-2015, Sep. 2001.

[8] R. C. Jaeger, J. C. Suhling, R. Ramani, A. T. Bradley, and J. Xu, "CMOS Stress Sensors on (100) silicon," IEEE Journal of Solid State Circuits, vol. 35, no. 1, pp. 85-95, Jan. 2000.

[9] T. Wang, C. Ko; S. Chang, S.Wu, T. Kuan, and W. Lee, "The Effects of Mechanical Uniaxial Stress on Junction Leakage in Nanoscale CMOSFETs," IEEE Trans. Electron Devices, vol. 55, pp. 572-577, Feb. 2008.

[10] A. Hamada, T. Furusawa, N. Saito, and E. Takeda, "A new aspect of mechanical stress effects in scaled MOS devices," IEEE Trans. Electron Devices, vol. 38, no. 4, pp. 895-900, Apr. 1991.

[11] S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr,“Electron mobility model for strained-Si devices,” IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 527–533, Apr. 2005.

[12] N. Wacker, H. Rempp, S. Schmiel, and J.N. Burghartz, “Compact Modeling of CMOS Transistors under Uniaxial Stress,” Proc. SAFE, pp. 179-181, Nov. 2009